dual igbtmod? nfh-series module 200 amperes/1200 volts CM200DU-24NFH powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 7/11 rev. 1 1 description: powerex igbtmod? modules are designed for use in high frequency applications; 30 khz for hard switching applications and 60 to 70 khz for soft switching applications. each module consists of two igbt transistors in a half-bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: low e sw(off) discrete super-fast recovery free-wheel diode isolated baseplate for easy heat sinking applications: power supplies induction heating welders ordering information: example: select the complete part module number you desire from the table below -i.e. CM200DU-24NFH is a 1200v (v ces ), 200 ampere dual igbtmod? power module. type current rating v ces amperes volts (x 50) cm 200 24 outline drawing and circuit diagram a w ft f n aa j g q q g h e b l (4 places) d m (3 places) k k k pp p q q v z y x v s s u c s r c2e1 e2 c1 g2 e2 e1 g1 label c2e1 e2 c1 e1 g1 e2 g2 dimensions inches millimeters a 4.25 108.0 b 2.44 62.0 c 1.14+0.04/-0.02 29.0+1.0/-0.5 d 3.660.01 93.00.25 e 1.890.01 48.00.25 f 0.98 25.0 g 0.24 6.0 h 0.59 15.0 j 0.7854 19.95 k 0.55 14.0 l 0.26 dia. 6.5 dia. m m6 metric m6 n 1.022 25.95 dimensions inches millimeters p 0.71 18.0 q 0.28 7.0 r 0.874 22.2 s 0.30 7.5 t 0.94 24.0 u 0.11 2.8 v 0.16 4.0 w 0.33 8.5 x 0.46 11.75 y 0.012 ~ 0 0.3 ~ 0 z 0.85 21.5 aa 0.69 17.5
CM200DU-24NFH dual igbtmod? nfh-series module 200 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 7/11 rev. 1 2 absolute maximum ratings, t j = 25 c unless otherwise specifed ratings symbol cm200du-24nf units junction temperature t j C40 to 150 c storage temperature t stg C40 to 125 c collector-emitter voltage (g-e short) v ces 1200 volts gate-emitter voltage (c-e short) v ges 20 volts collector current (t c = 25c) i c 200* amperes peak collector current i cm 400* amperes emitter current** (t c = 25c) i e 200* amperes peak emitter current** i em 400* amperes maximum collector dissipation (t c = 25c, t j 150c) p c 830 watts maximum collector dissipation (t c' = 25c, t j' 150c) p c 1300 watts mounting torque, m6 main terminal 40 in-lb mounting torque, m6 mounting 40 in-lb weight 400 grams isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 volts static electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v 1.0 ma gate leakage current i ges v ge = v ges , v ce = 0v 0.7 a gate-emitter threshold voltage v ge(th) i c = 20ma, v ce = 10v 4.5 6.0 7.5 volts collector-emitter saturation voltage v ce(sat) i c = 200a, v ge = 15v, t j = 25c 5.0 6.5 volts i c = 200a, v ge = 15v, t j = 125c 5.0 volts total gate charge q g v cc = 600v, i c = 200a, v ge = 15v 900 nc emitter-collector voltage** v ec i e = 200a, v ge = 0v 3.5 volts dynamic electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units input capacitance c ies 32 nf output capacitance c oes v ce = 10v, v ge = 0v 2.7 nf reverse transfer capacitance c res 0.6 nf inductive turn-on delay time t d(on) 300 ns load rise time t r v cc = 600v, i c = 200a, 80 ns switch turn-off delay time t d(off) v ge1 = v ge2 = 15v, r g = 1.6, 500 ns time fall time t f inductive load switching operation, 150 ns diode reverse recovery time** t rr i e = 200a 250 ns diode reverse recovery charge** q rr 7.5 c * pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi).
CM200DU-24NFH dual igbtmod? nfh-series module 200 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 7/11 rev. 1 3 thermal and mechanical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case r th(j-c) q per igbt 1/2 module, t c reference 0.15 c/w point per outline drawing thermal resistance, junction to case r th(j-c) d per fwdi 1/2 module, t c reference 0.24 c/w point per outline drawing thermal resistance, junction to case r th(j-c) 'q per igbt 1/2 module, 0.095 c/w t c reference point under chips thermal resistance, junction to case r th(j-c) 'd per fwdi 1/2 module, 0.14 c/w t c reference point under chips contact thermal resistance r th(c-f) per 1/2 module, thermal grease applied 0.04 c/w external gate resistance r g 1.6 16 collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 0 10 2 10 2 10 1 10 0 10 -1 10 1 01 34 25 10 1 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) 10 2 10 3 emitter current, i e , (amperes) gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 10 68 10 14 12 16 18 20 8 6 4 2 0 t j = 25c gate-emitter voltage, v ge , (volts) collector current, i c , (amperes) transfer characteristics (typical) 0 5 15 20 v ge = 10v t j = 25c t j = 125c t j = 25c t j = 125c v ge = 0v c ies c oes c res i c = 400a i c = 200a i c = 80a collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 02 46 81 0 0 v ge = 20v 10 11 12 13 14 15 9 8 t j = 25 c 400 200 300 100 0 400 200 300 100 10 collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (typical) 9 4 5 6 3 0 7 2 8 1 0 400 100 200 300 v ge = 15v t j = 25c t j = 125c 10 -1
CM200DU-24NFH dual igbtmod? nfh-series module 200 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 7/11 rev. 1 4 time, (s) tr ansient thermal imped ance char a cteris tics (igbt & fwdi) 10 0 10 -5 10 -4 10 -3 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 z th = r th ? (normalized v alue) single p ulse t c = 25c p er unit base = r th(j-c) = 0.15c/w (igbt) r th(j-c) = 0.24c/w (fwdi) normalized transient thermal impedance, z th(j-c') gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge vs. v ge 20 0 16 12 8 4 0 200 400 800 600 1400 1200 1000 v cc = 600v v cc = 400v i c = 200a collector current, i c , (amperes) switching loss, e sw(on) , e sw(off) , (mj/pulse) 10 2 10 1 10 2 10 1 10 0 v cc = 600v v ge = 15v r g = 1.6 t j = 125c inductive load c snubber at bus 10 3 switching loss vs. collector current (typical) e sw(on) e sw(off) gate resistance, r g , () switching loss, e sw(on) , e sw(off) , (mj/pulse) 10 2 10 0 10 1 10 1 10 0 v cc = 600v v ge = 15v i c = 200a t j = 125c inductive load c snubber at bus 10 2 switching loss vs. gate resistance (typical) e sw(on) e sw(off) gate resistance, r g , () reverse recovery switching loss, e rr , (mj/pulse) 10 2 10 0 10 1 10 1 10 0 v cc = 600v v ge = 15v i e = 200a t j = 125c inductive load c snubber at bus 10 2 reverse recovery switching loss vs. gate resistance (typical) emitter current, i e , (amperes) reverse recovery switching loss, e rr , (mj/pulse) 10 2 10 1 10 2 10 1 10 0 v cc = 600v v ge = 15v r g = 1.6 t j = 125c inductive load c snubber at bus 10 3 reverse recovery switching loss vs. emitter current (typical) e rr e rr collector current, i c , (amperes) 10 3 10 1 10 2 10 2 10 0 10 1 switching time, (ns) half-bridge switching characteristics (typical) t d(off) t d(on) t r v cc = 600v v ge = 15v r g = 1.6 t j = 125c inductive load t f 10 3 emitter current, i e , (amperes) reverse recovery time, t rr , (ns) reverse recovery characteristics (typical) 10 3 10 1 10 2 10 2 10 1 10 3 10 2 10 1 reverse recovery current, i rr , (amperes) 10 3 v cc = 600v v ge = 15v r g = 1.6 t j = 25c inductive load i rr t rr
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